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  unisonic technologies co., ltd ut4435 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2009 unisonic technologies co., ltd qw-r502-254.a 30v p-channel power trench mosfet ? description the ut4435 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) 20m ? @v gs =-10v * r ds(on) 35m ? @v gs =-4.5v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 2.gate 1.source 3.drain sop-8 lead-free: ut4435l halogen-free: ut4435g ? ordering information ordering number normal lead free plating halogen free package packing ut4435-s08-r UT4435L-S08-R ut4435g-s08-r sop-8 tape reel
ut4435 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-254.a ? pin configuration
ut4435 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-254.a ? absolute maximum ratings (t a =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 25 v continuous drain current (note 2) i d -8.8 a pulsed drain current (note 2) i dm -50 a power dissipation p d 1 w junction temperature t j 175 storage temperature t stg -55 ~ +175 note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction-to-ambient ja 125 /w junction-to-case jc 25 /w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250a -30 v drain-source leakage current i dss v ds =-24 v, v gs =0v -1 a gate-source leakage current i gss v gs = 25 v, v ds =0v 100 na on characteristics (note) gate-threshold voltage v gs(th) v ds =v gs , i ds =-250a -1 -1.7 -3 v on state drain current i d(on) v gs = -10v, v ds =-5v -50 a v gs =-10v, i d =-8.8a 15 20 static drain?source on?resistance r ds(on) v gs =4.5v, i d =-6.7a 22 35 m ? forward transconductance g fs v ds =-5v, i d =-8.8a 24 s dynamic parameters input capacitance c iss 1604 pf output capacitance c oss 408 pf reverse transfer capacitance c rss v ds =-15v, v gs =0v, f=1.0mhz 202 pf switching parameters (note) total gate charge q g 17 24 nc gate-source charge q gs 5 nc gate-drain charge q gd v ds =-15 v, v gs =-5 v, i d =-8.8 a 6 nc turn-on delay time t d(on) 13 23 ns turn-on rise time t r 13.5 24 ns turn-off delay time t d(off) 42 68 ns turn-off fall-time t f v dd =-15v,i d =-1 a,v gs =-10 v r g =6 ? , 25 40 ns drain-source diode characteristics and maximum ratings diode forward voltage(note) v sd i s =-2.1a, v gs =0v -0.73 -1.2 v maximum body-diode continuous current i s -2.1 a note: pulse test: pulse width < 300ms, duty cycle < 2.0%
ut4435 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-254.a ? typical characteristics drain current vs. source to drain voltage source to drain voltage, v sd (v) switching time waveforms v ds 90% 10% t d(on) t d(off) t f 10% 10% 90% 90% 0 0 v gs t r 0.2 0 0 0.5 0.8 0.4 0.6 2.0 1.0 2.5 3.0 1.0 1.5 0 50 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 250 100 150 200 300 drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0 0 50 30 250 10 100 150 200 300 20 5 0 40 350 400 450 0.2 0 0.4 0.8 0.6 drai n -source on-state resistance characteristics drain to source voltage, v ds (mv) 300 12 0 0 4 8 10 2 200 100 6 400 v gs =-10v, i d =-8.8a v gs =-4.5v, i d =-6.7a
ut4435 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-254.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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